1
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M. Richter, B.
Damilano, J. Massies, J.-Y. Duboz, and A.D. Wieck,
"InAs/In0.15Ga0.85As1-xNx quantum dots for 1.5 µm laser applications",
in Progress in Semiconductor Materials V -- Novel Materials and
Electronic and Optoelectronic Applications, edited by L.J. Olafson,
R.M. Biefeld, M.C. Wanke, A.W. Saxler (Mater. Res. Soc. Symp. Proc.
891, Warrendale, PA, 2005), 0891-EE03-29.
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2
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M. Richter, B.
Damilano, J.-Y. Duboz, J. Massies, and A. D. Wieck "Long wavelength
emitting InAs / Ga0.85In0.15NxAs1-x quantum dots on GaAs substrate",
Appl.Phys.Lett. 88, 231902
(2006).
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3
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M. Richter, M.
Hugues, B. Damilano, J. Massies, J.-Y. Duboz, D. Reuter, and A. D.
Wieck, "1.5 µm luminescence from InAs/GaxIn1-xNyAs1-y quantum dots
grown on GaAs substrate", phys.stat.sol. C 3, 3848-3851 (2006).
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4
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M. Hugues, M.
Richter, J.M. Chauveau, B. Damilano, J.-Y. Duboz, J. Massies, Th.
Taliercio, P. Lefebvre, Th. Guillet, P. Valvin, Th. Bretagnon, B. Gil,
and A. D. Wieck, "Investigation of Non-Radiative Processes in
InAs/(Ga,In)(N,As) Quantum dots", Japanese Journal of Applied Physics 46, 317-319 (2007).
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5
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M. Richter, D.
Reuter, J.Y. Duboz, and A. D. Wieck, "Energetic structure of
InAs/InGaAs quantum dots by capacitance-voltage spectroscopy", abstract
for EuroMBE workshop (2007).
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6
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F.-Y. Lo, A.
Melnikov, D. Reuter, Y. Cordier, and A. D. Wieck, "Magnetotransport in
Gd-implanted wurtzite GaN/AlxGa1-xN high electron mobility transistor
structures", Appl.Phys.Lett. 92,
112111 (2008).
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7
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M. Hugues, B.
Damilano, M. Al Khalfioui, J.-Y. Duboz, J. Massies, M. Richter, and A.
D. Wieck, "Optimum annealing temperature versus nitrogen composition in
InAs/(Ga,In) (N, As) quantum dots", Semiconductor Science and
Technology 23, 035020 (2008).
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8
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M. Richter, D.
Reuter, J.-Y. Duboz, and A. D. Wieck, "Influence of In0.15Ga0.85As
capping layers on the electron and hole energy levels of InAs quantum
dots", Physica E 40, 1891-1893
(2008).
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9
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F.-Y. Lo, A.
Melnikov, D. Reuter, Y. Cordier, and A. D. Wieck, "Magnetotransport in
Gd-implanted wurtzite GaN/AlxGa1-xN high electron mobility transistor
structures", Appl.Phys.Lett. 92,
112111 (2008).
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10
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J.-Y. Duboz, M.
Laügt, D. Schenk, B. Beaumont, J.-L. Reverchon, A. D. Wieck, and T.
Zimmerling, "GaN for x- ray detection" Appl.Phys.Lett. 92, 263501 (2008).
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11
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F.-Y. Lo, A.
Melnikov, D. Reuter, Y. Cordier, and A. D. Wieck, "Anomalous Hall
Effect in Gd Implanted Wurtzite AlxGa1-xN/GaN High Electron Mobility
Transistor Structures", Rare-Earth Doping of Advanced Materials for
Photonic Applications 61-9 (2008).
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12
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J.-Y. Duboz, B.
Beaumont, J. L. Reverchon, and A. D. Wieck, "Anomalous photoresponse of
GaN X-ray Schottky detectors", J.Appl.Phys. 105, 114512 (2009).
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13
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J. H. Buß, J.
Rudolph, F. Natali, F. Semond, and D. Hägele, "Anisotropic electron
spin relaxation in bulk GaN", Appl.Phys.Lett. 95, 192107 (2009).
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14
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J. H. Buß, J.
Rudolph, F. Natali, F. Semond, and D. Hägele, "Temperature dependence
of electron spin relaxation in bulk GaN", Phys.Rev.B 81, 155216 (2010).
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15
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S. Pezzagna, D.
Wildanger, P. Mazarov, A. D. Wieck, Y. Sarov, I. Rangelow, B. Naydenov,
F. Jelezko, S. W. Hell, and J. Meijer, "Nanoscale Engineering and
Optical Addressing of Single Spins in Diamond", small 6, 2117-2121 (2010).
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16
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J. H. Buß, J.
Rudolph, S. Starosielec, F. Semond, Y. Cordier, A. D. Wieck, and D.
Haegele, "Dyakonov-Perel electron spin relaxation in a wurtzite
semiconductor: From the nondegenerate to the highly degenerate regime",
Phys.Rev.B 84, 153202 (2011).
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17
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Y. Cordier, O.
Tottereau, L. Nguyen, M. Ramdani, A. Soltani, M. Boucherit, D. Troadec,
F.-Y. Lo, Y.-Y. Hu, A. Ludwig, and A. D. Wieck, "Growth of GaN based
structures on focused ion beam patterned templates", Phys.Stat.Solid.C 8, 1516-1519 (2011).
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18
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F.-Y. Lo, J.-Y.
Guo, V. Ney, A. Ney, M.-Y. Chern, A. Melnikov, S. Pezzagna, D. Reuter,
A. D. Wieck, and J. Massies, "Structural, optical, and magnetic
properties of Ho-implanted GaN thin films", Journal of Physics:
Conference Series 266,
012097-012101 (2011).
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19
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J. H. Buß, J.
Rudolph, S. Starosielec, A. Schaefer, F. Semond, Y. Cordier, A. D.
Wieck, and D. Hägele, "Dyakonov-Perel electron spin relaxation in a
wurtzite semiconductor: From the nondegenerate to the highly degenerate
regime" Phys. Rev. B 84,
153202 (2011).
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20
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H. Kim-Chauveau,
E.Frayssinet, B. Damilano, P. DeMierry, L. Bodiou, L. Nguyen, P.
Vennégues, J.-M. Chauveau, Y. Cordier, J.Y. Duboz, R. Charash, A.
Vajpeyi, J.-M. Lamy, M. Akhter, P.P. Maaskant, B. Corbett, A.
Hangleiter, and A. D. Wieck, "Growth optimization and characterization
of lattice-matched Al0.82In0.18N optical confinement layer for edge
emitting nitride laser diodes", J. Cryst.Growth 338, 20-29 (2012).
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21
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J. H. Buß, J.
Rudolph, S. Starosielec, A. Schaefer, F. Semond, and D. Hägele,
"Electron spin relaxation dynamics in GaN: influence of temperature,
doping density, and crystal orientation", Ed. M. Betz, A.Y. Elezzabi,
J.J. Song, and K.T. Tsen, Ultrafast Phenomena and Nanophotonics
XVII Proc. SPIE 8623B, Feb. 03-06 (2013).
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22
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J. H. Buß, J.
Rudolph, S. Shvarkov, F. Semond, D. Reuter, A. D.
Wieck, and D. Hägele, "Magneto-optical studies of Gd-implanted
GaN: No spin alignment of conduction band electrons", Applied Physics
Letters 103, 092401-1 - 092401-5 (2013).
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23
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Fang-Yuh Lo,
Jhong-Yu Guo, Cheng-De Huang, Kai-Chieh Chou, Hsiang-Lin Liu, Verena
Ney, Andreas Ney, Ming-Yau Chern, Stepan Shvarkov, Dirk Reuter, Andreas
D Wieck, Sébastien Pezzagna, and Jean Massies, "Evidences of defect
contribution in magnetically ordered Sm-implanted GaN", Current Applied
Physics 14, 7 - 11 (2014).
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24
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J-Y Duboz, E.
Frayssinet, S. Chenot, R. Claveau, Y. Cordier, M. Alkhalfioui, L.
Girgenrath, A. Wieck, Current instabilities in a GaN Gunn
heterostructure, WOCSDICE conference proceedings, Delphi, Greece 2014.
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