1
|
M. Richter, B.
Damilano, J. Massies, J.-Y. Duboz, and A.D. Wieck,
"InAs/In0.15Ga0.85As1-xNx quantum dots for 1.5 µm laser applications",
in Progress in Semiconductor Materials V -- Novel Materials and
Electronic and Optoelectronic Applications, edited by L.J. Olafson,
R.M. Biefeld, M.C. Wanke, A.W. Saxler (Mater. Res. Soc. Symp. Proc.
891, Warrendale, PA, 2005), 0891-EE03-29.
|
2
|
M. Richter, B.
Damilano, J.-Y. Duboz, J. Massies, and A. D. Wieck "Long wavelength
emitting InAs / Ga0.85In0.15NxAs1-x quantum dots on GaAs substrate",
Appl.Phys.Lett. 88, 231902
(2006).
|
3
|
M. Richter, M.
Hugues, B. Damilano, J. Massies, J.-Y. Duboz, D. Reuter, and A. D.
Wieck, "1.5 µm luminescence from InAs/GaxIn1-xNyAs1-y quantum dots
grown on GaAs substrate", phys.stat.sol. C 3, 3848-3851 (2006).
|
4
|
M. Hugues, M.
Richter, J.M. Chauveau, B. Damilano, J.-Y. Duboz, J. Massies, Th.
Taliercio, P. Lefebvre, Th. Guillet, P. Valvin, Th. Bretagnon, B. Gil,
and A. D. Wieck, "Investigation of Non-Radiative Processes in
InAs/(Ga,In)(N,As) Quantum dots", Japanese Journal of Applied Physics 46, 317-319 (2007).
|
5
|
M. Richter, D.
Reuter, J.Y. Duboz, and A. D. Wieck, "Energetic structure of
InAs/InGaAs quantum dots by capacitance-voltage spectroscopy", abstract
for EuroMBE workshop (2007).
|
6
|
F.-Y. Lo, A.
Melnikov, D. Reuter, Y. Cordier, and A. D. Wieck, "Magnetotransport in
Gd-implanted wurtzite GaN/AlxGa1-xN high electron mobility transistor
structures", Appl.Phys.Lett. 92,
112111 (2008).
|
7
|
M. Hugues, B.
Damilano, M. Al Khalfioui, J.-Y. Duboz, J. Massies, M. Richter, and A.
D. Wieck, "Optimum annealing temperature versus nitrogen composition in
InAs/(Ga,In) (N, As) quantum dots", Semiconductor Science and
Technology 23, 035020 (2008).
|
8
|
M. Richter, D.
Reuter, J.-Y. Duboz, and A. D. Wieck, "Influence of In0.15Ga0.85As
capping layers on the electron and hole energy levels of InAs quantum
dots", Physica E 40, 1891-1893
(2008).
|
9
|
F.-Y. Lo, A.
Melnikov, D. Reuter, Y. Cordier, and A. D. Wieck, "Magnetotransport in
Gd-implanted wurtzite GaN/AlxGa1-xN high electron mobility transistor
structures", Appl.Phys.Lett. 92,
112111 (2008).
|
10
|
J.-Y. Duboz, M.
Laügt, D. Schenk, B. Beaumont, J.-L. Reverchon, A. D. Wieck, and T.
Zimmerling, "GaN for x- ray detection" Appl.Phys.Lett. 92, 263501 (2008).
|
11
|
F.-Y. Lo, A.
Melnikov, D. Reuter, Y. Cordier, and A. D. Wieck, "Anomalous Hall
Effect in Gd Implanted Wurtzite AlxGa1-xN/GaN High Electron Mobility
Transistor Structures", Rare-Earth Doping of Advanced Materials for
Photonic Applications 61-9 (2008).
|
12
|
J.-Y. Duboz, B.
Beaumont, J. L. Reverchon, and A. D. Wieck, "Anomalous photoresponse of
GaN X-ray Schottky detectors", J.Appl.Phys. 105, 114512 (2009).
|
13
|
J. H. Buß, J.
Rudolph, F. Natali, F. Semond, and D. Hägele, "Anisotropic electron
spin relaxation in bulk GaN", Appl.Phys.Lett. 95, 192107 (2009).
|
14
|
J. H. Buß, J.
Rudolph, F. Natali, F. Semond, and D. Hägele, "Temperature dependence
of electron spin relaxation in bulk GaN", Phys.Rev.B 81, 155216 (2010).
|
15
|
S. Pezzagna, D.
Wildanger, P. Mazarov, A. D. Wieck, Y. Sarov, I. Rangelow, B. Naydenov,
F. Jelezko, S. W. Hell, and J. Meijer, "Nanoscale Engineering and
Optical Addressing of Single Spins in Diamond", small 6, 2117-2121 (2010).
|
16
|
J. H. Buß, J.
Rudolph, S. Starosielec, F. Semond, Y. Cordier, A. D. Wieck, and D.
Haegele, "Dyakonov-Perel electron spin relaxation in a wurtzite
semiconductor: From the nondegenerate to the highly degenerate regime",
Phys.Rev.B 84, 153202 (2011).
|
17
|
Y. Cordier, O.
Tottereau, L. Nguyen, M. Ramdani, A. Soltani, M. Boucherit, D. Troadec,
F.-Y. Lo, Y.-Y. Hu, A. Ludwig, and A. D. Wieck, "Growth of GaN based
structures on focused ion beam patterned templates", Phys.Stat.Solid.C 8, 1516-1519 (2011).
|
18
|
F.-Y. Lo, J.-Y.
Guo, V. Ney, A. Ney, M.-Y. Chern, A. Melnikov, S. Pezzagna, D. Reuter,
A. D. Wieck, and J. Massies, "Structural, optical, and magnetic
properties of Ho-implanted GaN thin films", Journal of Physics:
Conference Series 266,
012097-012101 (2011).
|
19
|
J. H. Buß, J.
Rudolph, S. Starosielec, A. Schaefer, F. Semond, Y. Cordier, A. D.
Wieck, and D. Hägele, "Dyakonov-Perel electron spin relaxation in a
wurtzite semiconductor: From the nondegenerate to the highly degenerate
regime" Phys. Rev. B 84,
153202 (2011).
|
20
|
H. Kim-Chauveau,
E.Frayssinet, B. Damilano, P. DeMierry, L. Bodiou, L. Nguyen, P.
Vennégues, J.-M. Chauveau, Y. Cordier, J.Y. Duboz, R. Charash, A.
Vajpeyi, J.-M. Lamy, M. Akhter, P.P. Maaskant, B. Corbett, A.
Hangleiter, and A. D. Wieck, "Growth optimization and characterization
of lattice-matched Al0.82In0.18N optical confinement layer for edge
emitting nitride laser diodes", J. Cryst.Growth 338, 20-29 (2012).
|
21
|
J. H. Buß, J.
Rudolph, S. Starosielec, A. Schaefer, F. Semond, and D. Hägele,
"Electron spin relaxation dynamics in GaN: influence of temperature,
doping density, and crystal orientation", Ed. M. Betz, A.Y. Elezzabi,
J.J. Song, and K.T. Tsen, Ultrafast Phenomena and Nanophotonics
XVII Proc. SPIE 8623B, Feb. 03-06 (2013).
|
22
|
J. H. Buß, J.
Rudolph, S. Shvarkov, F. Semond, D. Reuter, A. D.
Wieck, and D. Hägele, "Magneto-optical studies of Gd-implanted
GaN: No spin alignment of conduction band electrons", Applied Physics
Letters 103, 092401-1 - 092401-5 (2013).
|
23
|
Fang-Yuh Lo,
Jhong-Yu Guo, Cheng-De Huang, Kai-Chieh Chou, Hsiang-Lin Liu, Verena
Ney, Andreas Ney, Ming-Yau Chern, Stepan Shvarkov, Dirk Reuter, Andreas
D Wieck, Sébastien Pezzagna, and Jean Massies, "Evidences of defect
contribution in magnetically ordered Sm-implanted GaN", Current Applied
Physics 14, 7 - 11 (2014).
|
24
|
J-Y Duboz, E.
Frayssinet, S. Chenot, R. Claveau, Y. Cordier, M. Alkhalfioui, L.
Girgenrath, A. Wieck, Current instabilities in a GaN Gunn
heterostructure, WOCSDICE conference proceedings, Delphi, Greece 2014.
|
25
|
J. H. Buß, J. Rudolph, F. Natali, F. Semond, and D. Hägele, “Anisotropic electron spin relaxation in bulk GaN”, Appl.Phys.Lett. 95, 192107 (2009).
|
26
|
Y. Niimi, Y. Baines, T. Capron, D. Mailly, F.-Y. Lo, A. D. Wieck, T. Meunier, L. Saminadayar, and C. Bauerle, “Effect of Disorder on the Quantum Coherence in Mesoscopic Wires”, Phys.Rev.Lett. 102, 226801 (2009).
|
27
|
J. H. Buß, J. Rudolph, F. Natali, F. Semond, and D. Hägele, “Temperature dependence of electron spin relaxation in bulk GaN”, Phys.Rev.B 81, 155216 (2010).
|
28
|
D. Waddington, A. M. Burke, S. Fricke, H. H. Tan, C. Jagadish, A. R. Hamilton, K. Trunov, D. Reuter, A. D. Wieck, and A. P. Micolich, “Can insulating the gates lead us to stable modulation-doped hole quantum devices?”, Proceedings 2010 Conference on Optoelectronic and Microelectronic Materials&Devices (COMMAD 2010) p. 199-200 (2010). DOI: 10.1109/COMMAD.2010.5699738
|
29
|
J.C.H. Chen, O. Klochan, A. P. Micolich, A. R. Hamilton, K. das Gupta, F. Sfigakis, D. A. Ritchie, K. V. Trunov, D. Reuter, and A. D. Wieck, “Fabrication and characterization of an induced ambipolar device on AlGaAs/GaAs Heterostructures”, Proceedings 2010 Conference on Optoelectronic and Microelectronic Materials&Devices (COMMAD 2010) p. 153-4 (2010). DOI: 10.1109/COMMAD.2010.5699713
|
30
|
Y. Niimi, Y. Baines, T. Capron, D. Mailly, F.-Y. Lo, A. D. Wieck, T. Meunier, L. Saminadayar, and C. Bauerle, “Quantum coherence at low temperatures in mesoscopic systems: Effect of disorder”, Phys.Rev.B 81, 245306 (2010).
|
31
|
E. Schuster, R.A. Brand, F. Stromberg, F.-Y. Lo, A. Ludwig, D. Reuter, A. D. Wieck, S. Hoevel, N. C. Gerhardt, M. R. Hofmann, H. Wende, and W. Keune,
“Epitaxial growth and interfacial magnetism of spin aligner for remanent spin injection: [Fe/Tb](n) / Fe/MgO/GaAs-light emitting diode as a prototype system”, J.Appl.Phys. 108, 063902 (2010).
|
32
|
S. Pezzagna, D. Wildanger, P. Mazarov, A. D. Wieck, Y. Sarov, I. Rangelow, B. Naydenov, F. Jelezko, S. W. Hell, and J. Meijer, “Nanoscale Engineering and Optical Addressing of Single Spins in Diamond”, SMALL 6, 2117-2121 (2010).
|
33
|
J. H. Buss, J. Rudolph, S. Starosielec, F. Semond, Y. Cordier, A. D. Wieck, and D. Haegele, ”Dyakonov-Perel electron spin relaxation in a wurtzite semiconductor: From the nondegenerate to the highly degenerate regime”, Phys.Rev.B 84, 153202 (2011).
|
34
|
D. Bekermann, A. Ludwig, T. Toader, C. Maccato, D. Barreca, A. Gasparotto, C. Bock, A. D. Wieck, U. Kunze, E. Tondello, R. A. Fischer, and A. Devi, ”MOCVD of ZnO Films from Bis(Ketoiminato)Zn(II) Precursors: Structure, Morphology and Optical Properties” Chem.Vap.Dep. 17, 155-161 (2011).
|
35
|
A. Ludwig, R. Roescu, A. K. Rai, K. Trunov, F. Stromberg, M. Li, H. Soldat, A. Ebbing, N. C. Gerhardt, M. R. Hofmann, H. Wende, W. Keune, D. Reuter, and A. D. Wieck, ”Electrical spin injection in InAs quantum dots at room temperature and adjustment of the emission wavelength for spintronic applications”, 16th International Conference on Molecular Beam Epitaxy (ICMBE) Berlin, Germany Aug 22-27, (2010)
J.Cryst.Growth 323, 376-379 (2011).
|
36
|
K. Trunov, D. Reuter, A. Ludwig, J. C. H. Chen, O. Klochan, A. P. Micolich, A. R. Hamilton, and A. D. Wieck, ”(100) GaAs/Al(x)Ga(1-x)As heterostructures for Zeeman spin splitting studies of hole quantum wires”, 16th International Conference on Molecular Beam Epitaxy (ICMBE) Berlin, Germany Aug 22-27, (2010)
J.Cryst.Growth 323, 48-51 (2011).
|
37
|
Y.S. Chen, J. Huang, D. Reuter, A. Ludwig, A. D. Wieck, and G. Bacher, “Optically detected nuclear magnetic resonance in n-GaAs using an on-chip microcoil”, Appl.Phys.Lett. 98, 081911 (2011).
|
38
|
Y.S. Chen, J. Huang, A. Ludwig, D. Reuter, A. D. Wieck, and G. Bacher, “Manipulation of nuclear spin dynamics in n-GaAs using an on-chip microcoil”, J.Appl.Phys. 109, 016106 (2011).
|
39
|
Y. Cordier, O. Tottereau, L. Nguyen, M. Ramdani, A. Soltani, M. Boucherit, D. Troadec, F.-Y. Lo, Y.-Y. Hu, A. Ludwig, and A. D. Wieck, “Growth of GaN based structures on focused ion beam patterned templates”, Phys.Stat.Solid.C 8, 1516-1519 (2011).
|
40
|
F.-Y. Lo, J.-Y. Guo, V. Ney, A. Ney, M.-Y. Chern, A. Melnikov, S. Pezzagna, D. Reuter, A. D. Wieck, and J. Massies, “Structural, optical, and magnetic properties of Ho-implanted GaN thin films”, Journal of Physics: Conference Series 266, 012097-012101 (2011).
|
41
|
H. Soldat, M. Y. Li, N. C. Gerhardt, M. R. Hofmann, A. Ludwig, A. Ebbing, D. Reuter, A. D. Wieck, F. Stromberg, W. Keune, and H. Wende, „Room temperature spin relaxation length in spin-emitting diodes”, Appl. Phys. Lett. 99, 051102 (2011).
|
42
|
Y. Xia, J. Brault, M. Nemoz, M. Teisseire, B. Vinter, M. Leroux, and J.-M. Chauveau, "Optical properties of a-plane (Al, Ga)N/GaN multiple quantum wells grown on strain engineered Zn1 - xMgxO layers by molecular beam epitaxy", Appl.Phys.Lett. 99, 261910-3 (2011).
|
43
|
J. H. Buß, J. Rudolph, S. Starosielec, A. Schaefer, F. Semond, Y. Cordier, A. D. Wieck, and D. Hägele, “Dyakonov-Perel electron spin relaxation in a wurtzite semiconductor: From the nondegenerate to the highly degenerate regime” Phys. Rev. B 84, 153202 (2011).
|
44
|
H. Kim-Chauveau, E.Frayssinet, B. Damilano, P. DeMierry, L. Bodiou, L. Nguyen, P. Vennégues, J.-M. Chauveau, Y. Cordier, J.Y. Duboz, R. Charash, A. Vajpeyi, J.-M. Lamy, M. Akhter, P.P. Maaskant, B. Corbett, A. Hangleiter, and A. D. Wieck, “Growth optimization and characterization of lattice-matched Al0.82In0.18N optical confinement layer for edge emitting nitride laser diodes”, J. Cryst.Growth 338, 20–29 (2012).
|
45
|
H. Höpfner, C. Fritsche, Ar. Ludwig, As. Ludwig, F. Stromberg, H. Wende, W. Keune, D. Reuter, A. D. Wieck, N. C. Gerhardt, and M. R. Hofmann,”Spin relaxation in spin light-emitting diodes: effects of magnetic field and temperature”,
Ed. M. Betz, A.Y. Elezzabi, J.J. Song, and K.T. Tsen, Ultrafast Phenomena and Nanophotonics XVII Proc. SPIE 8623A, Feb. 03-06 (2013).
|
46
|
J. H. Buss, J. Rudolph, S. Starosielec, A. Schaefer, F. Semond, and D. Hägele, “Electron spin relaxation dynamics in GaN: influence of temperature, doping density, and crystal orientation”, Ed. M. Betz, A.Y. Elezzabi, J.J. Song, and K.T. Tsen, Ultrafast Phenomena and Nanophotonics XVII Proc. SPIE 8623B, Feb. 03-06 (2013).
|
47
|
H. Höpfner, C. Fritsche, Ar. Ludwig, As. Ludwig, F. Stromberg, H. Wende, W. Keune, D. Reuter, A. D. Wieck, N. C. Gerhardt, M. R. Hofmann, H.J. Ed. Drouhin, J. E. Wegrowe, M. Razeghi,
"Spin injection, transport, and relaxation in spin light-emitting diodes: magnetic field effects",
"SPIE Symposium on Spintronics VI", AUG 25-29 (2013),
Proc. SPIE 8813, Spintronics VI, 881318 (September 26, 2013).
|
48
|
A. Ludwig, L. Agudo, G. Eggeler, A. Ludwig, A. D. Wieck, and O. Petracic,
"Interaction effects and transport properties of Pt capped Co nanoparticles",
Journal of Applied Physics 113, 043917-1 - 043917-6 (2013).
|
49
|
J. K. Mishra, T. Langer, U. Rossow, S. Shvarkov, A. D. Wieck, and A. Hangleiter,
“Strong enhancement of Eu+3 luminescence in Europium-implanted GaN
by Si and Mg codoping”, Appl. Phys. Lett. 102, 061115-1 - 061115-3 (2013).
|
50
|
J. H. Buss, J. Rudolph, S. Shvarkov, H. Hardtdegen, A. D. Wieck, and D. Hägele,
"Long electron spin coherence in ion-implanted GaN: The role of localization", Applied Physics Letters 102, 192102-1 - 192102-4 (2013).
|
51
|
S. V. Samsonau, S. D. Shvarkov, F. Meinerzhagen, A. D. Wieck, and A. M. Zaitsev,
"Growth of graphene-like films for NO2 detection", Sensors and Actuators B – Chemical 182, 66-70 (2013).
|
52
|
T. Fujita, H. Kiyama, K. Morimoto, S. Teraoka, G. Allison, A. Ludwig, A. D. Wieck, A. Oiwa, and S. Tarucha, “Nondestructive Real-Time Measurement of Charge and Spin Dynamics of Photelectrons in a Double Quantum Dot”, Physical Review Letters 110, 266803-1 – 266803-5 (2013).
|
53
|
A. V. Kuhlmann, J. Houel, D. Brunner, A. Ludwig, D. Reuter, A. D. Wieck, and R. J. Warburton,
“A dark-field microscope for background-free detection of resonance fluorescence from single semiconductor quantum dots operating in a set-and-forget-mode“, Review of Scientific Instruments 84, 073905-1 – 073905-7 (2013).
|
54
|
J. H. Buss, J. Rudolph, S. Shvarkov, F. Semond, D. Reuter, A. D. Wieck, and D. Hägele,
"Magneto-optical studies of Gd-implanted GaN: No spin alignment of conduction band electrons", Applied Physics Letters 103, 092401-1 – 092401-5 (2013).
|
55
|
A. V. Kuhlmann, J. Houel, A. Ludwig, L. Greuter, D. Reuter, A.D. Wieck, M. Poggio, and R.J. Warburton, "Charge noise and spin noise in a semiconductor quantum device”, Nature Physics 9, 570-575 (2013).
|
56
|
M. Wortmann, A. Ludwig, J. Meijer, D. Reuter, and A. D. Wieck, "High-resolution mass spectrometer for liquid metal ion sources", Review of Scientific Instruments 84, 093305-1 - 093305-7 (2013).
|
57
|
S. V. Samsonau, E. Dzedzits, S. D. Shvarkov, F. Meinerzhagen, A. D. Wieck, and A. M. Zaitsev, "Formation of carbon nanofilms on single crystal quartz", Sensors and Actuators B-Chemical 186, 610-613 (2013).
|
58
|
J. H. Prechtel, A. V. Kuhlmann, J. Houel, L. Greuter, A. Ludwig, D. Reuter, A. D. Wieck, and R. J. Warburton, "Frequency-Stabilized Source of Single Photons from a Solid-State Qubit", Phys. Rev. X 3, 041006-1 - 041006-7 (2013).
|
59
|
Y. Xia, J. Brault, B. Damilano, S. Chenot, P. Vennéguès, M. Nemoz, M. Teisseire, M. Leroux, R. Obrecht,I.-C. Robin,J.L.Santailler, G. Feuillet, and J.-M. Chauveau, “Blue Light-Emitting Diodes Grown on ZnO Substrates”, Appl. Phys. Express 6, 042101 (2013).
|
60
|
Y. Xia, J. Brault, P. Vennéguès, M. Nemoz, M. Teisseire, M. Leroux, and J. M. Chauveau, "Growth of Ga- and N-polar GaN layers on O face ZnO substrates by molecular beam epitaxy," J. Cryst. Growth 388, 35-41 (2014).
|
61
|
J.-M. Chauveau, Y. Xia, I. Ben Taazaet-Belgacem, M. Teisseire, B. Roland, M. Nemoz, J. Brault, B. Damilano, M. Leroux, and B. Vinter, "Built-in electric field in ZnO based semipolar quantum wells grown on (101¯2) ZnO substrates," Appl. Phys. Lett. 103, 262104 (2013).
|
62
|
A.D. Wieck, “Verfügbarkeit der Elemente für die Halbleiterindustrie“, Strategische Rohstoffe – Risikovorsorge (Springer), (2014).
|
63
|
Fang-Yuh Lo, Jhong-Yu Guo, Cheng-De Huang, Kai-Chieh Chou, Hsiang-Lin Liu, Verena Ney, Andreas Ney, Ming-Yau Chern, Stepan Shvarkov, Dirk Reuter, Andreas D Wieck, Sébastien Pezzagna, and Jean Massies, “Evidences of defect contribution in magnetically ordered Sm-implanted GaN“, Current Applied Physics 14, 7 – 11 (2014).
|
64
|
S.J. MacLeod, A.M. See, I. Farrer, D.A. Ritchie, A. Ludwig, A.D. Wieck, and A. Hamilton, “Accumulation mode GaAs/AlGaAs 2D electron system with independent control of the channel and contact resistance“,Bulletin of the American Physical Society (2014).
|
65
|
P. Siyushev, K. Xia, R. Reuter, M. Jamali, N. Zhao, N. Yang, C. Duan, N. Kukharchyk, A. D. Wieck, R. Kolesov, and J. Wrachtrup, “Coherent properties of single rare-earth spin qubits”, Nature Communications 5, 3895 (2014).
|
66
|
N. Kukharchyk, S. Pal, J. Rödiger, A. Ludwig, S. Probst, A.V. Ustinov, P. Bushev, and A.D. Wieck, “Photoluminescence of focused ion beam implanted Er3+:Y2SiO5 crystals”, Phys. Status Solidi RRL, 1–5 (2014). DOI 10.1002/pssr.201409304
|
67
|
S. Shvarkov, A. Ludwig, A. Wieck, Y. Cordier, A. Ney, H. Hardtdegen, A. Haab, A. Trampert, R. Ranchal, J. Herfort, H.W. Becker, D. Rogalla, and D. Reuter “Magnetic properties of Gd doped GaN”, Phys. Stat. Sol. B 251, 1673-1684 (2014).
|
68
|
C. Rothfuchs, N. Kukharchyk, T. Koppe, F. Semond, S. Blumenthal, H.-W. Becker, D. J. As, H. C. Hofsäss, A. D. Wieck, A. Ludwig, "Photoluminescence of gallium ion irradiated hexagonal and cubic GaN quantum dots", Nucl. Instr. Meth. Phys. Res. B 383, 1-5 (2016).
|
69
|
C. Rothfuchs, F. Semond, M. Portail, O. Tottereau, A. Courville, A. D. Wieck, and A. Ludwig, "Ion-induced interdiffusion of surface GaN quantum dots", Nucl. Intr. Meth. Phys. Res. B 409, 107 (2017).
|
70
|
T. Kaldewey, S. Lüker, A. V. Kuhlmann, S. R. Valentin, J. M. Chauveau, A. Ludwig, A. D. Wieck, D. E. Reiter, T. Kuhn, and R. J. Warburton, “Demonstrating the decoupling regime of the electron-phonon interaction in a quantum dot using chirped optical excitation”, Phys. Rev. B 95, 241306(R), (2017).
|
71
|
Ludwig, A., Prechtel, J. H., Kuhlmann, A. V., Houel, J., Valentin, S. R., Warburton, R. J. & Wieck, A. D. Ultra-low charge and spin noise in self-assembled quantum dots. Journal of Crystal Growth 477, 193–196 (2017).
|
72
|
Ritzmann, J., Schott, R., Gross, K., Reuter, D., Ludwig, A. & Wieck, A. D. Overcoming Ehrlich-Schwöbel barrier in (1 1 1) A GaAs molecular beam epitaxy. Journal of Crystal Growth 481, 7–10 (2018).
|
73
|
Valentin, S. R., Schwinger, J., Eickelmann, P., Labud, P. A., Wieck, A. D., Sothmann, B. & Ludwig, A. Illumination-induced nonequilibrium charge states in self-assembled quantum dots. Phys. Rev. B 97, 045416 (2018).
|
74
|
Duboz, J.-Y., Zucchi, J., Frayssinet, E., Chalbet, P., Chenot, S., Hugues, M., Grini, J.-C., Trimaud, R., Vidal, M. & Hérault, J. GaN Schottky diodes for proton beam monitoring. Biomedical Physics & Engineering Express 5, 025015 (2019).
|
75
|
Fan Arcara, V., Damilano, B., Feuillet, G., Courville, A., Chenot, S. & Duboz, J.-Y. (Ga, In) N/GaN light emitting diodes with a tunnel junction and a rough n-contact layer grown by metalorganic chemical vapor deposition. AIP Advances 9, (2019).
|
76
|
Korsch, A. R., Nguyen, G. N., Schmidt, M., Ebler, C., Valentin, S. R., Lochner, P., Rothfuchs, C., Wieck, A. D. & Ludwig, A. Temperature and bias anomalies in the photoluminescence of InAs quantum dots coupled to a Fermi reservoir. Phys. Rev. B 99, 165303 (2019).
|
77
|
Scholz, S., Schott, R., Schmidt, M., Mehta, M., Ludwig, A. & Wieck, A. D. Self‐Organized Growth of Quantum Dots and Quantum Wires by Combination of Focused Ion Beams and Molecular Beam Epitaxy. Physica Status Solidi (b) 256, 1800375 (2019).
|
78
|
Babin, H. G., Ritzmann, J., Bart, N., Schmidt, M., Kruck, T., Zhai, L., Löbl, M. C., Nguyen, G. N., Spinnler, C. & Ranasinghe, L. Charge tunable GaAs quantum dots in a photonic nip diode. Nanomaterials 11, 2703 (2021).
|
79
|
Duboz, J.-Y., Zucchi, J., Frayssinet, E., Chenot, S., Hugues, M., Grini, J.-C. & Hérault, J. Proton Energy Loss in GaN. Physica Status Solidi (b) 258, 2100167 (2021).
|
80
|
Babin, H.-G., Bart, N., Schmidt, M., Spitzer, N., Wieck, A. D. & Ludwig, A. Full wafer property control of local droplet etched GaAs quantum dots. Journal of Crystal Growth 591, 126713 (2022).
|
81
|
Spinnler, C., Zhai, L., Nguyen, G. N., Ritzmann, J., Wieck, A. D., Ludwig, A., Javadi, A., Reiter, D. E., Machnikowski, P. & Warburton, R. J. Optically driving the radiative Auger transition. Nature communications 12, 6575 (2021).
|
82
|
Bart, N., Dangel, C., Zajac, P., Spitzer, N., Ritzmann, J., Schmidt, M., Babin, H.-G., Schott, R., Valentin, S. R. & Scholz, S. Wafer-scale epitaxial modulation of quantum dot density. Nature communications 13, 1633 (2022).
|
83
|
Duboz, J.-Y., Fan Arcara, V., Kessaci, C., Vézian, S. & Damilano, B. Light Polarization in Tunnel Junction Injected UV Light‐Emitting Diodes. Physica Status Solidi (a) 219, 2200055 (2022).
|
84
|
Sgroi, C. A., Brault, J., Duboz, J.-Y., Chenot, S., Vennéguès, P., Ludwig, A. & Wieck, A. D. Coulomb blockade: Toward charge control of self-assembled GaN quantum dots at room temperature. Applied Physics Letters 120, (2022).
|
85
|
Antoniadis, N. O., Hogg, M. R., Stehl, W. F., Javadi, A., Tomm, N., Schott, R., Valentin, S. R., Wieck, A. D., Ludwig, A. & Warburton, R. J. Cavity-enhanced single-shot readout of a quantum dot spin within 3 nanoseconds. Nature Communications 14, 3977 (2023).
|
86
|
Duboz, J.-Y., Isnard, W., Zuniga-Perez, J. & Massies, J. Why and how In composition fluctuations appear in InGaN? Journal of Crystal Growth 603, 127033 (2023).
|
87
|
Wang, Y., Faurby, C. F., Ruf, F., Sund, P. I., Nielsen, K., Volet, N., Heck, M. J., Bart, N., Wieck, A. D. & Ludwig, A. Deterministic photon source interfaced with a programmable silicon-nitride integrated circuit. npj Quantum Information 9, 94 (2023).
|
88
|
Yan, J.-Y., Chen, C., Zhang, X.-D., Wang, Y.-T., Babin, H.-G., Wieck, A. D., Ludwig, A., Meng, Y., Hu, X. & Duan, H. Coherent control of a high-orbital hole in a semiconductor quantum dot. Nature Nanotechnology 18, 1139–1146 (2023).
|
