Publikationen

1
M. Richter, B. Damilano, J. Massies, J.-Y. Duboz, and A.D. Wieck, "InAs/In0.15Ga0.85As1-xNx quantum dots for 1.5 µm laser applications", in Progress in Semiconductor Materials V -- Novel Materials and Electronic and Optoelectronic Applications, edited by L.J. Olafson, R.M. Biefeld, M.C. Wanke, A.W. Saxler (Mater. Res. Soc. Symp. Proc. 891, Warrendale, PA, 2005), 0891-EE03-29.
2
M. Richter, B. Damilano, J.-Y. Duboz, J. Massies, and A. D. Wieck "Long wavelength emitting InAs / Ga0.85In0.15NxAs1-x quantum dots on GaAs substrate", Appl.Phys.Lett. 88, 231902 (2006).
3
M. Richter, M. Hugues, B. Damilano, J. Massies, J.-Y. Duboz, D. Reuter, and A. D. Wieck, "1.5 µm luminescence from InAs/GaxIn1-xNyAs1-y quantum dots grown on GaAs substrate", phys.stat.sol. C 3, 3848-3851 (2006).
4
M. Hugues, M. Richter, J.M. Chauveau, B. Damilano, J.-Y. Duboz, J. Massies, Th. Taliercio, P. Lefebvre, Th. Guillet, P. Valvin, Th. Bretagnon, B. Gil, and A. D. Wieck, "Investigation of Non-Radiative Processes in InAs/(Ga,In)(N,As) Quantum dots", Japanese Journal of Applied Physics 46, 317-319 (2007).
5
M. Richter, D. Reuter, J.Y. Duboz, and A. D. Wieck, "Energetic structure of InAs/InGaAs quantum dots by capacitance-voltage spectroscopy", abstract for EuroMBE workshop  (2007).
6
F.-Y. Lo, A. Melnikov, D. Reuter, Y. Cordier, and A. D. Wieck, "Magnetotransport in Gd-implanted wurtzite GaN/AlxGa1-xN high electron mobility transistor structures", Appl.Phys.Lett. 92, 112111 (2008).
7
M. Hugues, B. Damilano, M. Al Khalfioui, J.-Y. Duboz, J. Massies, M. Richter, and A. D. Wieck, "Optimum annealing temperature versus nitrogen composition in InAs/(Ga,In) (N, As) quantum dots", Semiconductor Science and Technology 23, 035020 (2008).
8
M. Richter, D. Reuter, J.-Y. Duboz, and A. D. Wieck, "Influence of In0.15Ga0.85As capping layers on the electron and hole energy levels of InAs quantum dots", Physica E 40, 1891-1893 (2008).
9
F.-Y. Lo, A. Melnikov, D. Reuter, Y. Cordier, and A. D. Wieck, "Magnetotransport in Gd-implanted wurtzite GaN/AlxGa1-xN high electron mobility transistor structures", Appl.Phys.Lett. 92, 112111 (2008).
10
J.-Y. Duboz, M. Laügt, D. Schenk, B. Beaumont, J.-L. Reverchon, A. D. Wieck, and T. Zimmerling, "GaN for x- ray detection" Appl.Phys.Lett. 92, 263501 (2008).
11
F.-Y. Lo, A. Melnikov, D. Reuter, Y. Cordier, and A. D. Wieck, "Anomalous Hall Effect in Gd Implanted Wurtzite AlxGa1-xN/GaN High Electron Mobility Transistor Structures", Rare-Earth Doping of Advanced Materials for Photonic Applications 61-9 (2008).
12
J.-Y. Duboz, B. Beaumont, J. L. Reverchon, and A. D. Wieck, "Anomalous photoresponse of GaN X-ray Schottky detectors", J.Appl.Phys. 105, 114512 (2009).
13
J. H. Buß, J. Rudolph, F. Natali, F. Semond, and D. Hägele, "Anisotropic electron spin relaxation in bulk GaN", Appl.Phys.Lett. 95, 192107 (2009).
14
J. H. Buß, J. Rudolph, F. Natali, F. Semond, and D. Hägele, "Temperature dependence of electron spin relaxation in bulk GaN", Phys.Rev.B 81, 155216 (2010).
15
S. Pezzagna, D. Wildanger, P. Mazarov, A. D. Wieck, Y. Sarov, I. Rangelow, B. Naydenov, F. Jelezko, S. W. Hell, and J. Meijer, "Nanoscale Engineering and Optical Addressing of Single Spins in Diamond", small 6, 2117-2121 (2010).
16
J. H. Buß, J. Rudolph, S. Starosielec, F. Semond, Y. Cordier, A. D. Wieck, and D. Haegele, "Dyakonov-Perel electron spin relaxation in a wurtzite semiconductor: From the nondegenerate to the highly degenerate regime", Phys.Rev.B 84, 153202 (2011).
17
Y. Cordier, O. Tottereau, L. Nguyen, M. Ramdani, A. Soltani, M. Boucherit, D. Troadec, F.-Y. Lo, Y.-Y. Hu, A. Ludwig, and A. D. Wieck, "Growth of GaN based structures on focused ion beam patterned templates", Phys.Stat.Solid.C 8, 1516-1519 (2011).
18
F.-Y. Lo, J.-Y. Guo, V. Ney, A. Ney, M.-Y. Chern, A. Melnikov, S. Pezzagna, D. Reuter, A. D. Wieck, and J. Massies, "Structural, optical, and magnetic properties of Ho-implanted GaN thin films", Journal of Physics: Conference Series 266, 012097-012101 (2011).
19
J. H. Buß, J. Rudolph, S. Starosielec, A. Schaefer, F. Semond, Y. Cordier, A. D. Wieck, and D. Hägele, "Dyakonov-Perel electron spin relaxation in a wurtzite semiconductor: From the nondegenerate to the highly degenerate regime" Phys. Rev. B 84, 153202 (2011).
20
H. Kim-Chauveau, E.Frayssinet, B. Damilano, P. DeMierry, L. Bodiou, L. Nguyen, P. Vennégues, J.-M. Chauveau, Y. Cordier, J.Y. Duboz, R. Charash, A. Vajpeyi, J.-M. Lamy, M. Akhter, P.P. Maaskant, B. Corbett, A. Hangleiter, and A. D. Wieck, "Growth optimization and characterization of lattice-matched Al0.82In0.18N optical confinement layer for edge emitting nitride laser diodes", J. Cryst.Growth 338, 20-29 (2012).
21
J. H. Buß, J. Rudolph, S. Starosielec, A. Schaefer, F. Semond, and D. Hägele, "Electron spin relaxation dynamics in GaN: influence of temperature, doping density, and crystal orientation", Ed. M. Betz, A.Y. Elezzabi, J.J. Song, and K.T. Tsen, Ultrafast  Phenomena and Nanophotonics XVII Proc. SPIE 8623B, Feb. 03-06 (2013).
22
J. H. Buß, J. Rudolph, S.  Shvarkov, F.  Semond, D. Reuter, A. D.  Wieck, and  D. Hägele, "Magneto-optical studies of Gd-implanted GaN: No spin alignment of conduction band electrons", Applied Physics Letters 103, 092401-1 - 092401-5 (2013).
23
Fang-Yuh Lo, Jhong-Yu Guo, Cheng-De Huang, Kai-Chieh Chou, Hsiang-Lin Liu, Verena Ney, Andreas Ney, Ming-Yau Chern, Stepan Shvarkov, Dirk Reuter, Andreas D Wieck, Sébastien Pezzagna, and Jean Massies, "Evidences of defect contribution in magnetically ordered Sm-implanted GaN", Current Applied Physics 14, 7 - 11 (2014).
24
J-Y Duboz, E. Frayssinet, S. Chenot, R. Claveau, Y. Cordier, M. Alkhalfioui, L. Girgenrath, A. Wieck, Current instabilities in a GaN Gunn heterostructure, WOCSDICE conference proceedings, Delphi, Greece 2014.



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